View MBRS3100T3G_4156597.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MBRS3100T3
Preferred Device
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features http://onsemi.com
* * * * * *
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS
Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Pb-Free Package is Available
Mechanical Characteristics
SMC CASE 403 PLASTIC
* Case: Epoxy, Molded * Weight: 217 mg (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * *
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B
MARKING DIAGRAM
AYWW B310G G
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Range (Note 1) Symbol VRRM VRWM VR IF(AV) IFSM Value 100 Unit V
B310 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
3.0 130
A A
ORDERING INFORMATION
Device MBRS3100T3 Package SMC SMC (Pb-Free) Shipping 2500/Tape & Reel 2500/Tape & Reel
TJ
- 65 to +175
C
MBRS3100T3G
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Lead RqJL 11 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1
February, 2006 - Rev. 2
Publication Order Number: MBRS3100T3/D
MBRS3100T3
ELECTRICAL CHARACTERISTICS
Rating Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25C) (iF = 6.0 A, TJ = 25C) (iF = 3.0 A, TJ = 125C) (iF = 6.0 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Symbol VF 0.79 0.90 0.62 0.70 iR 0.05 5.0 mA Value Unit V
10 IF, INSTANTANEOUS FORWARD CURRENT (A) 125C 75C 25C
10 IF, INSTANTANEOUS FORWARD CURRENT (A) 125C 75C 25C
1
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1E-03 125C IR, REVERSE CURRENT (A) C, CAPACITANCE (pF) 1E-04 1000
Figure 2. Maximum Forward Voltage
TJ = 25C
1E-05
75C
100
1E-06 25C
1E-07 1E-08
10 0 20 40 60 80 100 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
http://onsemi.com
2
MBRS3100T3
Pfo, AVERAGE POWER DISSIPATION (W) 7 6 dc 5 4 3 2 1 0 60 RATED VOLTAGE APPLIED RqJL = 11 C/W TJ = 150C 80 100 120 140 160 SQUARE WAVE 4.5 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 dc
IF, AVERAGE FORWARD CURRENT (A)
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating - Lead
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MBRS3100T3
PACKAGE DIMENSIONS
SMC PLASTIC PACKAGE CASE 403-03 ISSUE E
HE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. DIM A A1 b c D E HE L L1 MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050
b
D
A c A1
L
L1
SOLDERING FOOTPRINT*
4.343 0.171
3.810 0.150
2.794 0.110
SCALE 4:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
4
MBRS3100T3/D

▲Up To Search▲

Price & Availability of MBRS3100T3G

	To Download MBRS3100T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .